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File No. 582 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
OOcn5LJ1]
Solid State Division
Power Transistors 2N6354
120-Y, 10-A, 140-W
Silicon N-P-N Transistor
For Switching Applications in Military and Industrial Equipment
JEOEC TO·3
Features:
• High VCEO(SUS): 120 V II Maximum safe-area-of operation curves
• Low saturation voltage: VCE(sat) ~ 0.5 V
a Fast switching speeds at IC = 5 A:
tr < 0.3p.s
ts~ljJ.s tl ~O.2p.s • High dissipation rating: PT = 80 W at 1000 C
= 140 W at 250 C
RCA type 2N6354° is an epitaxial silicon n·p-n power transistor with a multiple-emitter-site structure.
2N6354 Datasheet
