2N6354
Key Features
- High VCEO(SUS): 120 V II Maximum safe-area-of operation curves
- Low saturation voltage: VCE(sat) ~ 0.5 V a Fast switching speeds at IC = 5 A: tr < 0.3p.s ts~ljJ.s tl ~O.2p.s
- High dissipation rating: PT = 80 W at 1000 C = 140 W at 250 C RCA type 2N6354° is an epitaxial silicon n
- p-n power transistor with a multiple-emitter-site structure. The device is supplied in the JEDEC TO
- Formerly RCA Dev. No. TA7534. MAXIMUM RA,TINGS, Absolute-Maximum Values: "COLLECTOR-TO-BASE VOLTAGE .. _
