2N6350 - NPN DARLINGTON POWER SILICON TRANSISTOR

Microsemi (now Microchip Technology)

Datasheet Details

Part number	2N6350
Manufacturer	Microsemi (now Microchip Technology)
File Size	55.77 KB
Description	NPN DARLINGTON POWER SILICON TRANSISTOR
Datasheet	2N6350 Datasheet

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Other Datasheets by Microsemi (now Microchip Technology)

Part Number	Description
2N6351	NPN DARLINGTON POWER SILICON TRANSISTOR
2N6352	NPN DARLINGTON POWER SILICON TRANSISTOR
2N6353	NPN DARLINGTON POWER SILICON TRANSISTOR
2N6303	Silicon PNP Power Transistors
2N6304	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
2N6306	NPN POWER SILICON TRANSISTOR
2N6308	NPN POWER SILICON TRANSISTOR
2N6338	NPN POWER SILICON TRANSISTOR
2N6341	NPN POWER SILICON TRANSISTOR
2N6383	NPN DARLINGTON POWER SILICON TRANSISTOR

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TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 Devices 2N6350 2N6351 2N6352 2N6353 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCER VCBO VEBO IB IC 2N6350 2N6352 80 80 2N6351 2N6353 150 150 Units Vdc Vdc Vdc Vdc Adc Adc Adc 12 6.0 0.5 5.0 10(1) 2N6350 2N6351 Total Power Dissipation @ TA = 250C @ TC = 1000C Operating & Storage Junction Temperature Range PT TJ, Tstg Symbol RθJC 2N6352 2N6353 W W 0 C 2N6350, 2N6351 TO-33* 1.0(2) 2.0(4) (3) 5.0 25(5) -65 to +200 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Applies for tp ≤ 10 ms, Duty cycle ≤ 50% 2) Derate linearly @ 5.