QPD1013 transistor equivalent, gan rf transistor.
* Frequency: DC to 2.7 GHz
* Output Power (P3dB): 178 W1
* Linear Gain: 21.8 dB1
* Typical PAE3dB: 64.8 %1
* Operating Voltage: 65 V
* Low thermal.
from DC to 2.7 GHz. The device is housed in an industry-standard 7.2 x 6.6 mm surface mount DFN package.
Lead-free and R.
The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in an overmolded plastic package. The high power and wide bandwidth of the QPD1013 makes it su.
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