QPD1013
QPD1013 is GaN RF Transistor manufactured by Qorvo.
150W, 65V, DC
- 2.7 GHz, GaN RF Transistor
General Description
The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in an overmolded plastic package. The high power and wide bandwidth of the QPD1013 makes it suitable for many different applications from DC to 2.7 GHz. The device is housed in an industry-standard 7.2 x 6.6 mm surface mount DFN package.
Lead-free and ROHS pliant
Evaluation boards are available upon request.
Functional Block Diagram
6 Pin DFN (7.2 x 6.6 x 0.9 mm)
Product Features
- Frequency: DC to 2.7 GHz
- Output Power (P3dB): 178 W1
- Linear Gain: 21.8 dB1
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