QPD1013 - GaN RF Transistor

Qorvo

General Description

The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz.

This is a single stage unmatched power amplifier transistor in an overmolded plastic package.

Key Features

Frequency: DC to 2.7 GHz.
Output Power (P3dB): 178 W1.
Linear Gain: 21.8 dB1.
Typical PAE3dB: 64.8 %1.
Operating Voltage: 65 V.
Low thermal resistance package.
CW and Pulse capable.
7.2 x 6.6 mm package Note 1: @ 1.8 GHz (Loadpull).

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QPD1013 gan rf transistor by Qorvo - Datasheet Preview

Datasheet Details

Part number	QPD1013
Manufacturer	Qorvo
File Size	2.31 MB
Description	GaN RF Transistor
Datasheet	QPD1013 Datasheet

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QPD1013 150W, 65V, DC – 2.7 GHz, GaN RF Transistor General Description The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in an overmolded plastic package. The high power and wide bandwidth of the QPD1013 makes it suitable for many different applications from DC to 2.7 GHz. The device is housed in an industry-standard 7.2 x 6.6 mm surface mount DFN package. Lead-free and ROHS compliant Evaluation boards are available upon request. Functional Block Diagram 6 Pin DFN (7.2 x 6.6 x 0.9 mm) Product Features  Frequency: DC to 2.7 GHz  Output Power (P3dB): 178 W1  Linear Gain: 21.8 dB1  Typical PAE3dB: 64.