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QPD1013 - GaN RF Transistor

QPD1013 Description

QPD1013 150W, 65V, DC * 2.7 GHz, GaN RF Transistor General .
The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.

QPD1013 Features

* Frequency: DC to 2.7 GHz
* Output Power (P3dB): 178 W1
* Linear Gain: 21.8 dB1
* Typical PAE3dB: 64.8 %1
* Operating Voltage: 65 V
* Low thermal resistance package
* CW and Pulse capable

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Datasheet Details

Part number
QPD1013
Manufacturer
Qorvo
File Size
2.31 MB
Datasheet
QPD1013-Qorvo.pdf
Description
GaN RF Transistor

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GaN Transistor Qorvo
Qorvo QPD1013-like datasheet