QPD1019 - GaN RF IMFET

Datasheet Summary

Description

Waffle Pack of 18 QPD1019 2.9

Data Sheet Rev.

D, August 2022 Subject to change without notice.

3.3 GHz, GaN RF IMFET Absolute Maximum Ratings1 Parameter Rating Units Breakdown Voltage (BV

Features

Frequency: 2.9 to 3.3 GHz.
Output Power (P3dB)1: 590 W.
Linear Gain1: 15.5 dB.
Typical DE3dB1: 69%.
Operating Voltage: 50 V.
Low thermal resistance package.
Pulse capable Notes: 1. @ 3.1 GHz.

Qorvo

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Datasheet Details

Part number	QPD1019
Manufacturer	Qorvo
File Size	1.14 MB
Description	GaN RF IMFET
Datasheet	QPD1019 Datasheet
Additional preview pages of the QPD1019 datasheet.

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Full PDF Text Transcription

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QPD1019 ® 500 W, 50 V, 2.9 – 3.3 GHz, GaN RF IMFET Product Overview The QPD1019 is a 500W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 2.9 to 3.3 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 Ω in an industry standard air cavity package and is ideally suited for military radar. ROHS compliant. Evaluation boards are available upon request. Functional Block Diagram 17.40 x 24.00 x 4.437 mm Key Features • Frequency: 2.9 to 3.3 GHz • Output Power (P3dB)1: 590 W • Linear Gain1: 15.5 dB • Typical DE3dB1: 69% • Operating Voltage: 50 V • Low thermal resistance package • Pulse capable Notes: 1. @ 3.

Published: Mar 5, 2025 |