HYB18T512161BF sdram equivalent, 512-mbit x16 ddr2 sdram.
The 512-Mbit Double-Data-Rate-Two SDRAM offers the following key features:
* Commands entered on each positive clock edge, data and
* 1.8 V ± 0.1V VDD for [
&.
The device is designed to comply with all DDR2 DRAM key features: 1. posted CAS with additive latency, 2. write latency.
latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a single ended DQS or differential DQS-DQS pair in a source synchronous fashion. A 15-bit address bus for ×16 components is used to convey ro.
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