HYB18T1G160BF sdram equivalent, 1-gbit double-data-rate-two sdram.
The 1-Gbit Double-data-Rate SDRAM offers the following key features:
* Off-Chip-Driver impedance adjustment (OCD) and On
* 1.8 V ± 0.1 V Power Supply 1.8 V ± 0.1 .
The device is designed to comply with all DDR2 SDRAM key features: 1. Posted CAS with additive latency, 2. Write latenc.
Inputs are latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a single ended DQS or differential DQS-DQS pair in a source synchronous fashion. A 17-bit address bus for ×4 and ×8 organised comp.
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