Datasheet Details
| Part number | HYB18T1G160AF |
|---|---|
| Manufacturer | Infineon Technologies AG |
| File Size | 1.71 MB |
| Description | 1 Gbit DDR2 SDRAM |
| Datasheet |
 HYB18T1G160AF Datasheet
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Description
and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Features
- High Performance: -5 -400 -3.7 -533 -3S -667 -3 1Gb DDR2 SDRAM Speed Sorts DDR2 DDR2 DDR2 DDR2 -667 Units tck MHz Mb/s/pin Bin (CL-tRCD-TRP) max. Clock Frequency 3-3-3 4-4-4 5-5-5 4-4-4 200 400 3 15 15 40 55 266 533 4 15 15 45 60 5 15 15 45 60 333 667 4 12 12 45 57 Data Rate CAS Latency (CL) tRCD tRP tRAS tRC tck ns ns ns ns.
- 1.8V ± 0.1V Power Supply 1.8 V ± 0.1V (SSTL_18) compatible) I/O.
- DRAM organisations with 4, 8 and 16 data in/outputs.
- Double Da.