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QL83I6S-C, QL83I6S-A Datasheet - QSI

QL83I6S-C LASER DIODE

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL83I6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer TENTATIVE 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL83I6S-A/B/C AlGaAs Laser Diode Quantum Semiconductor International Co., Ltd. Ver.1 Mar. 2010 OVERVIEW QL83I6S-A/B/C is a MOCVD grown 830nm band AlGaAs laser diode with quantum well structure. It's an attractive light source, with.

QL83I6S-C Features

* - Visible Light Output : λp = 830 nm - Optical Power Output : 30mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode

* ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode

QL83I6S-A-QSI.pdf

This datasheet PDF includes multiple part numbers: QL83I6S-C, QL83I6S-A. Please refer to the document for exact specifications by model.
QL83I6S-C Datasheet Preview Page 2 QL83I6S-C Datasheet Preview Page 3

Datasheet Details

Part number:

QL83I6S-C, QL83I6S-A

Manufacturer:

QSI

File Size:

149.56 KB

Description:

Laser diode.

Note:

This datasheet PDF includes multiple part numbers: QL83I6S-C, QL83I6S-A.
Please refer to the document for exact specifications by model.

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QL83I6S-C QL83I6S-A LASER DIODE QSI

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