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Prisemi

PNMT6N2B Datasheet Preview

PNMT6N2B Datasheet

Transistor

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PNMT6N2B
Transistor with N-MOSFET
Feature
This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant.
PNMT6N2B is composed by a transistor and a MOSFET
Top View
6C5C4S
Transistor:
Very low collector to emitter saturation voltage
DC current gain >100
3A continuous collector current
PNP epitaxial planar silicon transistor
MOSFET:
VDS(V)
30
MOSFET Product Summary
RDS(on)(Ω)
VGS(th)(V)
7@ VGS=2.5V,ID=10mA 0.5 to 1.5
ID(A)
0.1
7(C) 8(B/D)
1E2E3G
Bottom View
4S5C6C
D) (C
Transistor
3G2E1E
Absolute maximum rating@25
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter -Base Breakdown Voltage
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation @25°C
Storage Temperature
Max. Operating Junction Temperature
Symbol
V (BR)CEO
V (BR)CBO
V (BR)EBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Value
-30
-40
-5
-3
-6
-0.2
-0.5
1.2
-65~150
150
Units
V
V
V
A
A
A
A
W
°C
°C
Rev.06.1 1 www.prisemi.com




Prisemi

PNMT6N2B Datasheet Preview

PNMT6N2B Datasheet

Transistor

No Preview Available !

PNMT6N2B
Transistor with N-MOSFET
Electrical characteristics per line@25( unless otherwise specified)
Parameter
DC Current Gain
Symbol
hFE
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Collector Cut-off Current (IE=0)
Emitter Cut-off Current(IC=0)
MOSFET
VBE(sat)
ICBO
IEBO
Absolute maximum rating@25
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Total Power Dissipation
TA=25
Conditions
IC=-1mA,VCE=-5.0V
IC=-1A,VCE=-5.0V
IC=-0.1A,IB=-1mA
IC=-0.5A,IB=-50mA
IC=-1A,IB=-100mA
IC=-1A,IB=-0.05mA
VCB=-40V
VCB=-30V TC=125°C
VEB=-5V
Symbol
VDS
VGS
ID
ID
PD
Min.
150
100
-
-
-
Typ.
Max.
-
-0.14
-0.17
-0.31
-1.1
-0.1
-20
-0.1
Units
-
V
V
μA
μA
Value
30
±20
0.10
0.36
150
Units
V
V
A
A
mW
Electrical characteristics per line@25( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Rev.06.1
Symbol
Conditions
OFF CHARACTERISTICS
VDSS
ID =10μA,VGS=0V
IDSS VDS =30V,VGS=0V
IGSS VDS =0V,VGS=±20V
VGS(th)
VDS =VGS, ID =250μA
VGS=2.5V, ID =1mA
RDS(ON)
VGS=2.5V, ID =10mA
VGS=4V, ID =10mA
VGS=10V, ID =100mA
2
Min. Typ. Max. Units
30 - -
V
- - 1 μA
- - ±1 μA
0.5
- 1.5
V
6.5 9
Ω
79
Ω
-
46
Ω
-
35
Ω
www.prisemi.com


Part Number PNMT6N2B
Description Transistor
Maker Prisemi
PDF Download

PNMT6N2B Datasheet PDF






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