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Prisemi

PNMT6N1-LB Datasheet Preview

PNMT6N1-LB Datasheet

Transistor

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Feature
This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant.
PNMT6N1-LB is composed by a transistor and a MOSFET
Transistor:
Very low collector to emitter saturation voltage
DC current gain <100
3A continuous collector current
PNP epitaxial planar silicon transistor
MOSFET:
VDS(V)
40
MOSFET Product Summary
RDS(on)(Ω)
VGS(th)(V)
4.5@ VGS=4V
0.6 to 1.5
ID(A)
0.18
PNMT6N1-LB
Transistor with N-MOSFET
E1
B2
D3
Top View
6 C
5G
4 S
C6
G5
S4
Bottom View
C
D
1 E
2 B
3 D
Transistor
Electrical characteristics per line@25( unless otherwise specified)
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter -Base Breakdown Voltage
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation @25°C
Storage Temperature
Max. Operating Junction Temperature
Junction-to-Ambient Thermal Resistance(1)
Symbol
V (BR)CEO
V (BR)CBO
V (BR)EBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
RθJA
Conditions
IC =-10mA
IC =-0.1mA
IE =-0.1mA
Note 1: Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
Value
-30
-40
-5
-3
-6
-0.2
-0.5
1.2
-65~150
150
104
Units
V
V
V
A
A
A
A
W
°C
°C
°C/ W
Rev.06.5
1
www.prisemi.com




Prisemi

PNMT6N1-LB Datasheet Preview

PNMT6N1-LB Datasheet

Transistor

No Preview Available !

Transistor with N-MOSFET
Absolute maximum rating@25
Parameter
Symbol
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Collector Cut-off Current (IE=0)
Emitter Cut-off Current(IC=0)
MOSFET
VBE(sat)
ICBO
IEBO
Conditions
IC=-0.001A,VCE=-5.0V
IC=-0.1A,VCE=-5.0V
IC=-0.5A,VCE=-5.0V
IC=-0.5A,IB=-15mA
IC=-1.2A,IB=-40mA
IC=-2A,IB=-220mA
IC=-1A,IB=-0.05mA
VCB=-40V
VCB=-30V TC=125°C
VEB=-5V
PNMT6N1-LB
Min.
60
60
60
Typ.
Max.
120
105
100
-0.14
-0.23
-0.30
-1.1
-0.1
-20
-0.1
Units
-
V
V
μA
μA
Electrical characteristics per line@25( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
Symbol
Conditions
OFF CHARACTERISTICS
VDSS
ID =10μA,VGS=0V
IDSS VDS =35V,VGS=0V
IGSS VDS =0V,VGS=±15V
VGS(th)
VDS =VGS, ID =250μA
RDS(ON)
VGS=4.5V, ID =0.2A
DYNAMIC PARAMETERS
CISS
CDSS
CRSS
VGS=0V, VDS =25V,
f=1MHz
SWITCHING PARAMETERS
td(on)
td(off)
VDS=30V, VGS =10V,
RG=25Ω, RL=150Ω
ID =0.2A
Min. Typ. Max. Units
40 -
-V
- - 1 μA
- - ±1 μA
0.6 - 1.5 V
- - 4Ω
- - 40 pF
- - 20 pF
- - 5 pF
- - 20 ns
- - 20 ns
Rev.06.5
2 www.prisemi.com


Part Number PNMT6N1-LB
Description Transistor
Maker Prisemi
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PNMT6N1-LB Datasheet PDF






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