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Powerex Power Semiconductors

CM100TU-12H Datasheet Preview

CM100TU-12H Datasheet

IGBT Module

No Preview Available !

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TU-12H
Six IGBTMOD™
U-Series Module
100 Amperes/600 Volts
G
EH
A
B
F
EH
G
ER
S 4 - Mounting
Holes
K
L
GuP
C EuP
D
TC
Measured
Point
GvP
EvP
GwP
EwP
GuN
EuN
GvN
EvN
TC
Measured
Point
GwN
M
EwN
u vw
5 - M4 NUTS
K
JJ
N
EH E H E
0.110 - 0.5 Tab
P
Q
P
GuP
EuP
U
GvP
EvP
V
GwP
EwP
W
GuN
EuN
N
GvN
EvN
Outline Drawing and Circuit Diagram
GwN
EwN
Dimensions
A
B
C
D
E
F
G
H
J
Inches
4.02
3.15±0.01
3.58
2.91±0.01
0.43
0.79
0.39
0.75
0.79
Millimeters
102.0
80.0±0.25
91.0
74.0±0.25
11.0
20.0
10.0
19.1
20.0
Dimensions
K
L
M
N
P
Q
R
S
Inches
0.05
0.74
1.55
0.12
0.32
1.02
0.47
0.22 Dia.
Millimeters
1.25
18.7
39.3
3.05
8.1
26.0
11.85
5.5 Dia.
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100TU-12H is a
600V (VCES), 100 Ampere Six-
IGBT IGBTMOD™ Power Module.
Current Rating
Type Amperes
CM 100
VCES
Volts (x 50)
12
81




Powerex Power Semiconductors

CM100TU-12H Datasheet Preview

CM100TU-12H Datasheet

IGBT Module

No Preview Available !

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TU-12H
Six IGBTMOD™ U-Series Module
100 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM100TU-12H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current (Tj 150°C)
Emitter Current**
Peak Emitter Current**
Maximum Collector Dissipation (Tj < 150°C)
Mounting Torque, M4 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
-40 to 150
-40 to 125
600
±20
100
200*
100
200*
400
15
Mounting Torque, M5 Mounting
– 31
Weight
– 570
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Voltage
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 10mA, VCE = 10V
4.5
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 100A, VGE = 15V, Tj = 25°C
IC = 100A, VGE = 15V, Tj = 125°C
Total Gate Charge
QG
VCC = 300V, IC = 100A, VGE = 15V
Emitter-Collector Voltage*
VEC
IE = 100A, VGE = 0V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Typ.
6
2.4
2.6
200
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Max.
1
0.5
7.5
3.0
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Cies
Output Capacitance
Coes
VCE = 10V, VGE = 0V
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cres
td(on)
tr
td(off)
tf
trr
Qrr
VCC = 300V, IC = 100A,
VGE1 = VGE2 = 15V,
RG = 6.3, Resistive
Load Switching Operation
IE = 100A, diE/dt = -200A/µs
IE = 100A, diE/dt = -200A/µs
Min. Typ. Max. Units
– – 8.8 nf
– – 4.8 nf
– – 1.3 nf
– 100
ns
– 250
ns
– 200
ns
– 300
ns
– 160
ns
0.24 –
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
Per IGBT 1/6 Module
Per Free-Wheel Diode 1/6 Module
Per Module, Thermal Grease Applied
82
Min.
Typ.
0.018
Max.
0.31
0.7
Units
°C/W
°C/W
°C/W


Part Number CM100TU-12H
Description IGBT Module
Maker Powerex Power Semiconductors
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CM100TU-12H Datasheet PDF






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