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CM100BU-12H - IGBT Module

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of four IGBT Transistors in an H-Bridge configuration, with each transistor having a reverse-connected super-fast recovery freewheel diode.

Features

  • Low Drive Power.
  • Low VCE(sat).
  • Discrete Super-Fast Recovery Free-Wheel Diode.
  • Isolated Baseplate for Easy Heat Sinking.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CM100BU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Four IGBTMOD™ U-Series Module 100 Amperes/600 Volts A B F E H E G R S 4 - Mounting Holes L M GuP EuP D GvP EvP GuN EuN U V C TC Measured Point GvN EvN P TC Measured Point Q 4 - M4 NUTS J E J H K F G V T U N L 0.110 - 0.5 Tab V W X P Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of four IGBT Transistors in an H-Bridge configuration, with each transistor having a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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