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F1010ES - Power MOSFET

Download the F1010ES datasheet PDF (F1010E included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • rrent Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD ].
  • VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www. irf. com 7 IRF1010ES/IRF1010EL D2Pak Package Outline www. DataSheet4U. com 1.4 0 (.055 ) M AX. 1 0.54 (.4 15) 1 0.29 (.4 05) -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (F1010E_PowerMOSFET.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number F1010ES
Manufacturer Power MOSFET
File Size 161.55 KB
Description Power MOSFET
Datasheet download datasheet F1010ES Datasheet

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Full PDF Text Transcription

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PD - 91720 IRF1010ES IRF1010EL l l l l www.DataSheet4U.com l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated G HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
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