Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- rrent Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
[ ISD ].
- VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs
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7
IRF1010ES/IRF1010EL
D2Pak Package Outline
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1.4 0 (.055 ) M AX. 1 0.54 (.4 15) 1 0.29 (.4 05) -A2
4.69 (.1 85) 4.20 (.1 65)
-B 1.3 2 (.05 2) 1.2 2 (.04 8)
1 0.16 (.4 00 ) RE F. 6.
F1010EL Datasheet
