■ High ruggedness
■ RDS(ON) (Max 2.3 Ω)@VGS=10V
■ Gate Charge (Typ. 27nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
1 2 3 1 2 3 1 3
PFF4N60
PFP4N60
BVDSS : 600V ID : 4.5A RDS(ON) : 2.3ohm
2
1. Gate 2. Drain 3. Source
General Description
These N-channel enhancement mode field effect po.