PFF4N60 mosfet equivalent, n-channel mosfet.
* High ruggedness
* RDS(ON) (Max 2.3 Ω)@VGS=10V
* Gate Charge (Typ. 27nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
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PFF4N60.
These N-channel enhancement mode field effect power transistor is using Powergate semiconductor’s advanced planar stripe, DMOS technology intended for off line switch mode power supply. Also, especially designed to minimize RDS(ON) and high rugged av.
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