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PFF4N60E - N-Channel MOSFET

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 10 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 2.0 Ω (Typ. ) @VGS=10V  Pb Free.

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Datasheet Details

Part number PFF4N60E
Manufacturer Wing On
File Size 1.11 MB
Description N-Channel MOSFET
Datasheet download datasheet PFF4N60E Datasheet

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Full PDF Text Transcription

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PFP4N60E / PFF4N60E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 10 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V  Pb Free APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  DC-AC converters. PFP4N60E / PFF4N60E 600V N-Channel MOSFET BVDSS = 600 V RDS(on) = 2.0 Ω ID = 4.2 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3.
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