PMX100N06T datasheet, mosfets equivalent, Potens semiconductor

Features and benefits

* 60V,100A,RDS(ON)=8mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Motor Dr.

Application

TO247 Pin Configuration D G BVDSS 60V RDSON 8m ID 100A Features
* 60V,100A,RDS(ON)=8mΩ@VGS=10V
* Improv.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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