PMXB350UPE datasheet, mosfet equivalent, NXP

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datasheet Download (Size : 258.83KB)

Features and benefits

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* Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent therma.

Application

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* High-side load switch and charging switch for portable devices Power management in battery drive.

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
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* Trench MOSFET.

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