PMR08N65M - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using advanced super junction technology.

Features

Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available ID 7A TO252 Pin Configuration D GDS.

Potens semiconductor

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Datasheet Details

Part number	PMR08N65M
Manufacturer	Potens semiconductor
File Size	612.77 KB
Description	N-Channel MOSFETs
Datasheet	PMR08N65M Datasheet
Additional preview pages of the PMR08N65M datasheet.

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PMR04N65M - N-Channel MOSFETs

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650V N-Channel MOSFETs PMR08N65M General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply BVDSS 650V RDSON 1.

Published: Aug 21, 2018 |