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PMR04N65M - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using advanced super junction technology.

Features

  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available ID 4A TO251 Pin Configuration G DS.

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Datasheet Details

Part number PMR04N65M
Manufacturer Potens semiconductor
File Size 537.03 KB
Description N-Channel MOSFETs
Datasheet download datasheet PMR04N65M Datasheet

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Full PDF Text Transcription

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650V N-Channel MOSFETs PMR04N65M General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply BVDSS 650V RDSON 2.
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