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PJX20N60D - N-Channel MOSFETS

Description

These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20A,600V, RDS(ON) =180mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet preview – PJX20N60D

Datasheet Details

Part number PJX20N60D
Manufacturer Potens semiconductor
File Size 462.08 KB
Description N-Channel MOSFETS
Datasheet download datasheet PJX20N60D Datasheet
Additional preview pages of the PJX20N60D datasheet.

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Full PDF Text Transcription

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600V N-Channel MOSFETS PJX20N60D General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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