PJR04N70L Description
These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply TO251 G DS BVDSS 700V RDSON 0.93 ID.
PJR04N70L Key Features
- 4A,700V, RDS(ON) =0.93Ω@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available