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PJR07N65LB - N-Channel MOSFETS

Description

These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 7A,650V, RDS(ON) =0.57Ω@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PJR07N65LB
Manufacturer Potens semiconductor
File Size 446.30 KB
Description N-Channel MOSFETS
Datasheet download datasheet PJR07N65LB Datasheet

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Full PDF Text Transcription

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650V N-Channel MOSFETS PJR07N65LB General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply TO251 Pin Configuration D D GDS G S BVDSS 650V RDSON 0.57 ID 7A Features  7A,650V, RDS(ON) =0.
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