* 80V,12A,RDS(ON)=100mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Motor.

TO251 Pin Configuration D G GDS S PDR8944 BVDSS 80V RDSON 100m ID 12A Features
* 80V,12A,RDS(ON)=100mΩ@V.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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