logo

PDR6912 Datasheet, Potens semiconductor

PDR6912 mosfets equivalent, n-channel mosfets.

PDR6912 Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 484.63KB)

PDR6912 Datasheet

Features and benefits


* 60V,11A, RDS(ON) =75mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Moto.

Application

TO251 Pin Configuration D G GDS S PDR6912 BVDSS 60V RDSON 75m ID 11A Features
* 60V,11A, RDS(ON) =75mΩ@V.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

Image gallery

PDR6912 Page 1 PDR6912 Page 2 PDR6912 Page 3

TAGS

PDR6912
N-Channel
MOSFETs
Potens semiconductor

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts