PDR6907 datasheet, mosfet equivalent, Potens semiconductor

Features and benefits

* -60V,-13A, RDS(ON) =68mΩ@VGS = -10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* M.

Application

TO251 Pin Configuration D G DS G S PDR6907 BVDSS -60V RDSON 68m ID -13A Features
* -60V,-13A, RDS(ON) =6.

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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