PDP4960 mosfets equivalent, n-channel mosfets.
* 40V, 150A, RDS(ON) =3.8mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available
Applications
* MB / VGA / Vcore
* POL.
TO220 Pin Configuration
D
G GDS
S
BVDSS 40V
RDSON 3.8m
ID 150A
Features
* 40V, 150A, RDS(ON) =3.8mΩ@VGS = .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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