PDP4902 Datasheet | Potens semiconductor

Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avala Dnche and mutation mode. These devices are well suited for high efficiency fast switching applications. TO220 Pin Configuration BVDSS 40V RDSON 2.5m ID 160A Features - 40V, 160A, RDS(ON) =2.5mΩ@VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available Applications - MB / VGA / Server Vcore - POL Applications - SMPS 2nd SR - BMS System Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS IDM EAS IAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) (Chip Limitation) Drain Current - Continuous (TC=100℃)...