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PDP4902 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

avalaDnche and commutation mode.

Features

  • 40V, 160A, RDS(ON) =2.5mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PDP4902
Manufacturer Potens semiconductor
File Size 434.79 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDP4902 Datasheet

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Full PDF Text Transcription

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40V N-Channel MOSFETs PDP4902 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalaDnche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO220 Pin Configuration G D S GDS S BVDSS 40V RDSON 2.5m ID 160A Features  40V, 160A, RDS(ON) =2.
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