* 30V, 176A, RDS(ON) =3mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* MB .

TO220 Pin Configuration D GDS G S BVDSS 30V RDSON 3m ID 176A Features
* 30V, 176A, RDS(ON) =3mΩ@VGS = 10V.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts