PDP3902 datasheet, mosfets equivalent, Potens semiconductor

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Features and benefits

* 30V, 200A, RDS(ON) =2.1mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* M.

Application

TO220 Pin Configuration G D S GDS S BVDSS 30V RDSON 2.1m ID 200A Features
* 30V, 200A, RDS(ON) =2.1mΩ@VGS .

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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