PDN6912S datasheet, mosfets equivalent, Potens semiconductor

Features and benefits

* 60V,3.2A, RDS(ON) =75mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Mot.

Application

SOT23-3S Pin Configuration D S G G D S BVDSS 60V RDSON 75m ID 3.2A Features
* 60V,3.2A, RDS(ON) =75mΩ@VGS .

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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