* -60V,-2A, RDS(ON) =190mΩ@VGS = -10V
* Improved dv/dt capability
* Fast switching
* Green Device Available Applications
* Motor Drive
* Power To.

SOT23-3S Pin Configuration D D S G G S BVDSS RDSON ID -60V 190m -2A Features
* -60V,-2A, RDS(ON) =190mΩ@V.

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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