* -60V,-50A, RDS(ON) 10.2mΩ@VGS = -10V
* Fast switching
* Green Device Available
* Suit for -4.5V Gate Drive Applications Applications
* POL Applicati.

TO220F Pin Configuration D G BVDSS -60V RDSON 10.2m ID -50A Features
* -60V,-50A, RDS(ON) 10.2mΩ@VGS = -10V.

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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