PDF6906 mosfets equivalent, n-channel mosfets.
* 60V, 30A, RDS(ON) =21mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* Mot.
TO220F Pin Configuration
D
G DS G
S
BVDSS 60V
RDSON 21m
ID 30A
Features
* 60V, 30A, RDS(ON) =21mΩ@VGS = 10.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
Image gallery
TAGS
Download (Size : 674.29KB)