* -60V,-70A, RDS(ON) =9.2mΩ@VGS = -10V
* Fast switching
* Green Device Available
* Suit for -4.5V Gate Drive Applications Applications
* POL Applicati.

TO252 Pin Configuration D G S G D S BVDSS -60V RDSON 9.2m ID -70A Features
* -60V,-70A, RDS(ON) =9.2mΩ@VGS =.

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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