* -60V,-10A, RDS(ON) =105mΩ@VGS = -10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* .

TO252 Pin Configuration D G S G D S BVDSS -60V RDSON 105m ID -10A Features
* -60V,-10A, RDS(ON) =105mΩ@VGS =.

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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