* 30V,72A, RDS(ON) =3.7mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Net.

PPAK3X3 Pin Configuration D DDDD S SSG G S BVDSS RDSON ID 30V 3.7m 72A Features
* 30V,72A, RDS(ON) =3.7m.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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