PDC3960X datasheet, mosfets equivalent, Potens semiconductor

Features and benefits

* 30V, 115A, RDS(ON) =2.4mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* .

Application

PPAK5x6 Pin Configuration DDDD SSSG G D S BVDSS 30V RDSON 2.4m ID 115A Features
* 30V, 115A, RDS(ON) =2.4m.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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