* -30V,-30A, RDS(ON) =18mΩ@VGS = -10V
* Fast switching
* Green Device Available
* Suit for -4.5V Gate Drive Applications Applications
* MB / VGA / Vco.

PPAK3x3 Pin Configuration DDDD S S SG G D S BVDSS -30V RDSON 18m ID -30A Features
* -30V,-30A, RDS(ON) =18.

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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