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Potens semiconductor

PDC3906X Datasheet Preview

PDC3906X Datasheet

N-Channel MOSFETs

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30V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
PPAK5x6 Pin Configuration
DDDD
SSSG
PDC3906X
BVDSS
30V
RDSON
5.5m
ID
80A
Features
30V,80A, RDS(ON) =5.5mΩ@VGS = 10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
Applications
MB / VGA / Vcore
POL Applications
SMPS 2nd SR
Absolute Maximum Ratings Tc=25unless otherwise noted
Symbol
VDS
VGS
ID
IDM
EAS
IAS
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (TC=25)
Drain Current – Continuous (TC=100)
Drain Current – Pulsed1
Single Pulse Avalanche Energy2
Single Pulse Avalanche Current2
Power Dissipation (TC=25)
Power Dissipation – Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
Thermal Characteristics
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
Rating
30
±20
80
51
320
88
42
74
0.59
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
W/
Typ.
---
---
Max.
62
1.7
Unit
/W
/W
Potens semiconductor corp.
1
Ver.1.02




Potens semiconductor

PDC3906X Datasheet Preview

PDC3906X Datasheet

N-Channel MOSFETs

No Preview Available !

30V N-Channel MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Static State Characteristics
Symbol
Parameter
Conditions
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VDS=30V , VGS=0V , TJ=25
VDS=24V , VGS=0V , TJ=125
VGS=±20V , VDS=0V
RDS(ON) Static Drain-Source On-Resistance3
VGS=10V , ID=20A
VGS=4.5V , ID=10A
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
VGS=VDS , ID =250uA
gfs Forward Transconductance
VDS=10V , ID=10A
Dynamic Characteristics
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Rg
Total Gate Charge3 , 4
Gate-Source Charge3 , 4
Gate-Drain Charge3 , 4
Turn-On Delay Time3 , 4
Rise Time3 , 4
Turn-Off Delay Time3 , 4
Fall Time3 , 4
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VDS=15V , VGS=4.5V , ID=20A
VDD=15V , VGS=10V , RG=3.3
ID=15A
VDS=25V , VGS=0V , F=1MHz
VGS=0V, VDS=0V, F=1MHz
PDC3906X
Min.
30
---
---
---
---
---
---
1
---
---
Typ.
---
0.04
---
---
---
4.6
6.5
1.6
-4
18
Max.
---
---
1
10
±100
5.5
8.5
2.5
---
---
Unit
V
V/
uA
uA
nA
m
m
V
mV/
S
--- 11.1 ---
--- 1.85 ---
--- 6.8 ---
--- 7.5 ---
--- 14.5 ---
--- 35.2 ---
--- 9.6 ---
--- 1160 ---
--- 200 ---
--- 180 ---
--- 2.5 ---
nC
ns
pF
Guaranteed Avalanche Energy
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Conditions
VDD=25V, L=0.1mH, IAS=20A
Min.
20
Typ.
---
Max.
---
Unit
mJ
Drain-Source Diode Characteristics
Symbol
Parameter
Conditions
IS Continuous Source Current
ISM Pulsed Source Current3
VSD Diode Forward Voltage3
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
trr Reverse Recovery Time
VGS=0V,IS=1A , di/dt=100A/µs
Qrr Reverse Recovery Charge
TJ=25
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=25V,VGS=10V,L=0.1mH,IAS=42A.,RG=25,Starting TJ=25.
3. The data tested by pulsed , pulse width 300us , duty cycle 2%.
4. Essentially independent of operating temperature.
Potens semiconductor corp.
2
Min.
---
---
---
---
---
Typ.
---
---
---
---
---
Max.
80
320
1
---
---
Unit
A
A
V
ns
nC
Ver.1.02


Part Number PDC3906X
Description N-Channel MOSFETs
Maker Potens semiconductor
Total Page 5 Pages
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