PDC3906X datasheet, mosfet equivalent, Potens semiconductor

Features and benefits

* 30V,80A, RDS(ON) =5.5mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* MB.

Application

PPAK5x6 Pin Configuration DDDD SSSG PDC3906X BVDSS 30V RDSON 5.5mΩ ID 80A Features
* 30V,80A, RDS(ON) =5.5mΩ@V.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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