PDC3810V datasheet, mosfet equivalent, Potens semiconductor

Features and benefits

* 30V,35A, RDS(ON) =13mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* MB.

Application

PPAK3X3 Dual Pin Configuration D1D1D2D2 D1 G1 G2 S1G1S2G2 S1 D2 S2 BVDSS 30V RDSON 13m ID 35A Features
*.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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