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Potens semiconductor

PDC3808V Datasheet Preview

PDC3808V Datasheet

N-Channel MOSFETs

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30V N-Channel MOSFETs
PDC3808V
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
PPAK3x3 Dual Pin Configuration
D1
D1 D1D2 D2
S1G1S2 G2
G1
G2
S1
D2
S2
BVDSS
30V
RDSON
10.5m
ID
42A
Features
30V,42A, RDS(ON) =10.5mΩ@VGS = 10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
Applications
MB / VGA / Vcore
POL Applications
SMPS 2nd SR
Absolute Maximum Ratings Tc=25unless otherwise noted
Symbol
VDS
VGS
ID
IDM
EAS
IAS
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (TC=25) (Silicon Limited)
Drain Current – Continuous (TC=100) (Silicon Limited)
Drain Current – Pulsed1
Single Pulse Avalanche Energy2
Single Pulse Avalanched Current2
Power Dissipation (TC=25)
Power Dissipation – Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±20
42
27
168
45
30
35
0.28
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
W/
Thermal Characteristics
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
Typ.
---
---
Max.
62
3.7
Unit
/W
/W
Potens semiconductor corp.
1
Ver.1.00




Potens semiconductor

PDC3808V Datasheet Preview

PDC3808V Datasheet

N-Channel MOSFETs

No Preview Available !

30V N-Channel MOSFETs
PDC3808V
Electrical Characteristics (TJ=25 , unless otherwise noted)
Off Characteristics
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VDS=30V , VGS=0V , TJ=25
VDS=24V , VGS=0V , TJ=125
VGS=±20V , VDS=0V
Min.
30
---
---
---
---
Typ.
---
0.04
---
---
---
Max.
---
---
1
10
±100
Unit
V
V/
uA
uA
nA
On Characteristics
RDS(ON) Static Drain-Source On-Resistance3
VGS(th)
VGS(th)
gfs
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Forward Transconductance
VGS=10V , ID=16A
VGS=4.5V , ID=8A
VGS=VDS , ID =250uA
VDS=10V , ID=8A
--- 9 10.5 m
--- 13 16 m
1.2 1.6 2.5
V
--- -4 --- mV/
--- 9.5 ---
S
Dynamic and switching Characteristics
Qg Total Gate Charge3 , 4
Qgs Gate-Source Charge3 , 4
VDS=15V , VGS=4.5V , ID=20A
Qgd Gate-Drain Charge3 , 4
Td(on)
Turn-On Delay Time3 , 4
Tr Rise Time3 , 4
VDD=15V , VGS=10V , RG=3.3
Td(off)
Turn-Off Delay Time3 , 4
ID=15A
Tf Fall Time3 , 4
--- 7.5 12
--- 1.3 2.6
--- 4.5
8
--- 4.8
9
--- 12.5 24
--- 27.6 52
--- 8.2 16
nC
ns
Ciss Input Capacitance
--- 680 1000
Coss Output Capacitance
VDS=25V , VGS=0V , F=1MHz
--- 150 220 pF
Crss Reverse Transfer Capacitance
--- 70 105
Rg Gate resistance
VGS=0V, VDS=0V, F=1MHz
--- 2.7 5.4
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current3
Diode Forward Voltage3
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
VGS=0V,IS=1A , di/dt=100A/µs
TJ=25
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=25V,VGS=10V,L=0.1mH,IAS=17A.,RG=25,Starting TJ=25.
3. The data tested by pulsed , pulse width 300us , duty cycle 2%.
4. Essentially independent of operating temperature.
Min.
---
---
---
---
---
Typ.
---
---
---
---
---
Max.
42
168
1
---
---
Unit
A
A
V
ns
nC
Potens semiconductor corp.
2
Ver.1.00


Part Number PDC3808V
Description N-Channel MOSFETs
Maker Potens semiconductor
Total Page 5 Pages
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