* 100V,60A, RDS(ON) =13mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Ne.

PPAK5X6 Pin Configuration DD DD SSSG G D S BVDSS 100V RDSON 13m ID 60A Features
* 100V,60A, RDS(ON) =13mΩ@.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

PDC0902X

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