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Potens semiconductor

PDC02N60T Datasheet Preview

PDC02N60T Datasheet

N-Channel MOSFETs

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600V N-Channel MOSFETs
PDC02N60T
General Description
These N-Channel enhancement mode power field effect
transistors are planar stripe, DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency switch mode power supply
BVDSS
600V
RDSON
5.0
Features
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
ID
2A
PPAK5x6 Dual Pin Configuration
Applications
D2
D2
D1
D1
D1 D2
G1 G2
High efficient switched mode power supplies
TV Power
Adapter/charger
LED Lighting
G2
S2
G1
S1
1
1
S1
S2
1D2
1
Absolute Maximum Ratings Tc=25unless otherwise noted
Symbol
VDS
VGS
ID
IDM
EAS
IAS
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Continuous (TC=25)
Drain Current Continuous (TC=100)
Drain Current Pulsed1
Single Pulse Avalanche Energy2
Single Pulse Avalanche Current2
Power Dissipation (TC=25)
Power Dissipation Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
Thermal Characteristics
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
Rating
600
±30
2
1.3
8
65
3.6
63
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
W/
Typ.
---
---
Max.
62
2
Unit
/W
/W
Potens semiconductor corp.
1
Ver.1.02




Potens semiconductor

PDC02N60T Datasheet Preview

PDC02N60T Datasheet

N-Channel MOSFETs

No Preview Available !

600V N-Channel MOSFETs
PDC02N60T
Electrical Characteristics (TJ=25 , unless otherwise noted)
Off Characteristics
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VDS=600V , VGS=0V , TJ=25
VDS=480V , VGS=0V , TJ=125
VGS=±30V , VDS=0V
Min.
600
---
---
---
---
Typ.
---
0.6
---
---
---
Max.
---
---
1
10
±100
Unit
V
V/
uA
uA
nA
On Characteristics
RDS(ON)
VGS(th)
VGS(th)
gfs
Static Drain-Source On-Resistance
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Forward Transconductance
VGS=10V , ID=1A
VGS=VDS , ID =250uA
VDS=10V , ID=1A
--- 4.3
5
345 V
--- -7 --- mV/
--- 2.7 ---
S
Dynamic and switching Characteristics
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Total Gate Charge3,4
Gate-Source Charge3,4
Gate-Drain Charge3,4
Turn-On Delay Time3,4
Rise Time3,4
Turn-Off Delay Time3,4
Fall Time3,4
VDS=480V , VGS=10V , ID=1A
VDD=300V , VGS=10V , RG=25
ID=1A
Ciss Input Capacitance
Coss Output Capacitance
VDS=25V , VGS=0V , F=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
---
---
---
---
---
---
---
---
---
---
9.9 15
2.9 6
3.1 6
16.6 32
6.8 13
23.1 44
17 33
425 620
26 40
3.2 7
1.9 3.8
nC
ns
pF
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time3
Reverse Recovery Charge3
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
VGS=0V,IS=1A , dI/dt=100A/µs
TJ=25
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=50V,VGS=10V,L=10mH,IAS=3.6A.,RG=25,Starting TJ=25.
3. The data tested by pulsed , pulse width 300us , duty cycle 2%.
4. Essentially independent of operating temperature.
Min.
---
---
---
---
---
Typ.
---
---
---
---
---
Max.
2
4
1
---
---
Unit
A
A
V
ns
nC
Potens semiconductor corp.
2
Ver.1.02


Part Number PDC02N60T
Description N-Channel MOSFETs
Maker Potens semiconductor
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