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PJM10H05NST Datasheet, Ping Jing

PJM10H05NST n-mos equivalent, n-mos.

PJM10H05NST Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 647.81KB)

PJM10H05NST Datasheet

Features and benefits


* RDS(ON) <300mΩ @ VGS=10V(Typ:200mΩ)
* VDS=100V, ID=5A
* Fully characterized avalanche voltage and current
* Excellent package for good heat dissipation.

Application

The package form is SOT-223, which accords with the RoHS standard. Features:
* RDS(ON) <300mΩ @ VGS=10V(Typ:200mΩ) .

Description

The PJM10H05NST uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is SOT-223, which accords with the RoHS standard. Features:
* RDS(ON.

Image gallery

PJM10H05NST Page 1 PJM10H05NST Page 2 PJM10H05NST Page 3

TAGS

PJM10H05NST
N-MOS
Ping Jing

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