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PJM50H30NTH - N-Channel Power MOSFET

Features

  • Advanced Planar Process.
  • RDS(ON), typ. =150mΩ@VGS=10V.
  • Low Gate Charge Minimize Switching Loss.
  • Rugged Poly Silicon Gate Structure.

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Datasheet Details

Part number PJM50H30NTH
Manufacturer Ping Jing
File Size 488.50 KB
Description N-Channel Power MOSFET
Datasheet download datasheet PJM50H30NTH Datasheet

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Features  Advanced Planar Process  RDS(ON), typ.=150mΩ@VGS=10V  Low Gate Charge Minimize Switching Loss  Rugged Poly Silicon Gate Structure Applications  BLDC Motor Driver  Electric Welder  High Efficiency SMPS PJM50H30NTH N-Channel Power MOSFET TO-3PN G DS D Absolute Maximum Ratings Ratings at TC = 25℃ unless otherwise specified. Parameter Drain-to-Source Voltage Continuous Drain Current TC=100 ℃ Pulsed Drain Current Note 1 Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery Note 2 Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering Note: 1. Repetitive rating; pulse width limited by maximum junction temperature. 2. Package limited current. 3.
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