BLV75-12 Features
* multi-base structure and emitter-ballasting resistors for an optimum temperature profile
* gold metallization ensures excellent reliability
* internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a c
Datasheet Details
BLV75-12, BLV75
Philips
88.28 KB
Vhf power transistor.
This datasheet PDF includes multiple part numbers: BLV75-12, BLV75.
Please refer to the document for exact specifications by model.
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BLV75-12 Distributor
