BLF1820-40 datasheet, transistor equivalent, Philips

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datasheet Download (Size : 155.40KB)

Features and benefits

* High power gain
* Easy power control
* Excellent ruggedness
* Designed for broadband operation (1.8 to 2 GHz)
* Internal input and output matching f.

Application

* Common source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range
* Suitab.

Description

drain gate source, connected to flange 1 Top view 2 3 MBL290 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flange package with a ceramic cap. The common source is connected to the mount.

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