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Composite Transistors
XN01872 (XN1872)
Silicon n-channel enhancement MOSFET
Unit: mm
For switching ■ Features
• Two elements incorporated into one package (Source-coupled FETs) • Reduction of the mounting area and assembly cost by one half
3
2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5
0.16+0.10 –0.06
1.50+0.25 –0.05
2.8+0.2 –0.3
2 0.30+0.10 –0.05 10˚
1
■ Basic Part Number
• 2SK0621 (2SK621) × 2
1.1+0.2 –0.1
(0.65)
Parameter Drain-source surrender voltage Gate-source voltage (Drain open) Drain curennt Peak drain current Total power dissipation Channel temperature Storage temperature
Symbol VDSS VGSO ID IDP PT Tch Tstg
Rating 50 8 100 200 300 150 −55 to +150
Unit V V mA mA mW °C °C
1: Drain (FET1) 2: Drain (FET2) 3: Gate (FET2) EIAJ: SC-74A
0 to 0.
XN01872 Datasheet
