Two elements incorporated into one package (Emitter-coupled transistors).
Reduction of the mounting area and assembly cost by one half
2 0.30+0.10.
0.05 10˚ 1.
Basic Part Number.
2SD2623 × 2
1.1+0.2.
0.1
(0.65).
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junct.
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Composite Transistors
XN01558
Silicon NPN epitaxial planar type
For low-frequency amplification
3 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5
1.50+0.25 –0.05 2.8+0.2 –0.3
Unit: mm
0.16+0.10 –0.06
■ Features
• Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half
2 0.30+0.10 –0.05 10˚ 1
■ Basic Part Number
• 2SD2623 × 2
1.1+0.2 –0.1
(0.65)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 25 20 12 0.
XN01558 Datasheet
